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MTP2P50E
Power MOSFET
2 Amps, 500 Volts
P ? Channel TO ? 220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage ? blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain ? to ? source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
http://onsemi.com
2 AMPERES, 500 VOLTS
R DS(on) = 6 W
P ? Channel
D
Features
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? This is a Pb ? Free Device*
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
4
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4
Drain
Rating
Drain ? Source Voltage
Symbol
V DSS
Value
500
Unit
Vdc
Drain ? Gate Voltage (R GS = 1.0 M W )
Gate ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 10 ms)
V DGR
V GS
V GSM
500
± 20
± 40
Vdc
Vdc
Vpk
TO ? 220AB
CASE 221A
STYLE 5
MTP
2P50EG
AYWW
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation
Derate above 25 ° C
I D
I D
I DM
P D
2.0
1.6
6.0
75
0.6
Adc
Apk
W
W/ ° C
1
2
3
1
Gate
2
Drain
3
Source
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 100 Vdc, V GS = 10 Vdc,
I L = 4.0 Apk, L = 10 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
T J , T stg
E AS
R q JC
R q JA
? 55 to 150
80
1.67
62.5
° C
mJ
° C/W
MTP2P50E = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 sec
T L
260
° C
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MTP2P50EG
TO ? 220AB
(Pb ? Free)
50 Units/Rail
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2010
May, 2010 ? Rev. 6
1
Publication Order Number:
MTP2P50E/D
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